elektronische bauelemente ssg4835p -9.5 a, -30 v, r ds(on) 19 m ?? p-ch enhancement mode power mosfet 14-jul-2014 rev. c page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature sop-8 surface mount package saves board space. ? high power and current handling capability. ? extended v gs range (20) for battery pack applications. package information package mpq leader size sop-8 2.5k 13? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v t a = 25c -9.5 a continuous drain current 1 t a = 70c i d -8.3 a pulsed drain current 2 i dm -50 a continuous source current (diode conduction) 1 i s -4 a t a = 25c 3.1 w total power dissipation 1 t a = 70c p d 2.2 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 40 c / w thermal resistance junction-ambient (max.) 1 steady state r ja 80 c / w notes 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. sop-8 millimete r millimete r ref. min. max. ref. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. s s s gd d d d
elektronische bauelemente ssg4835p -9.5 a, -30 v, r ds(on) 19 m ?? p-ch enhancement mode power mosfet 14-jul-2014 rev. c page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate threshold voltage v gs(th) -1 - - v v ds = v gs , i d = -250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v - - -1 a v ds = -24v, v gs = 0v zero gate voltage drain current i dss - - -25 a v ds = -24v, v gs = 0v, t j =55c on-state drain current 1 i d(on) -20 - - a v ds = -5v, v gs = -10v - - 19 v gs = -10v, i d = -7.6a drain-source on-resistance 1 r ds(on) - - 30 m ? v gs = -4.5v, i d = -6a forward transconductance 1 g fs - 20 - s v ds = -15v, i d = -7.6a diode forward voltage v sd - -0.74 - v i s = -2a, v gs = 0v dynamic 2 total gate charge q g - 31 - gate-source charge q gs - 6.8 - gate-drain charge q gd - 13 - nc i d = -7.6a v ds = -15v v gs = -4.5v turn-on delay time t d(on) - 8 - rise time t r - 16 - turn-off delay time t d(off) - 98 - fall time t f - 53 - ns v ds = -15v, i d = -7.6a v gen = -10v, r l = 1.9 ? r g = 6 ? input capacitance c iss - 1934 - output capacitance c oss - 408 - reverse transfer capacitance c rss - 226 - pf v ds = -15v v gs =0 f=1mhz notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
elektronische bauelemente ssg4835p -9.5 a, -30 v, r ds(on) 19 m ?? p-ch enhancement mode power mosfet 14-jul-2014 rev. c page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente ssg4835p -9.5 a, -30 v, r ds(on) 19 m ?? p-ch enhancement mode power mosfet 14-jul-2014 rev. c page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
